دیتاشیت STGF10NB60SD
مشخصات دیتاشیت
| نام دیتاشیت | STG(F,P)10NB60SD |
|---|---|
| حجم فایل | 436.825 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 15 |
دانلود دیتاشیت STG(F,P)10NB60SD |
STG(F,P)10NB60SD Datasheet |
|---|
مشخصات
- RoHS: true
- Type: -
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: STMicroelectronics STGF10NB60SD
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 23A
- Power Dissipation (Pd): 25W
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): 0.6mJ
- Pulsed Collector Current (Icm): 80A
- Turn?off Switching Loss (Eoff): 5mJ
- Diode Reverse Recovery Time (Trr): 37ns
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
- Package: TO-220FP-3
- Manufacturer: STMicroelectronics
- Series: PowerMESH™
- Packaging: Tube
- Part Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 23A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
- Power - Max: 25W
- Switching Energy: 600µJ (on), 5mJ (off)
- Input Type: Standard
- Gate Charge: 33nC
- Td (on/off) @ 25°C: 700ns/1.2µs
- Test Condition: 480V, 10A, 1kOhm, 15V
- Reverse Recovery Time (trr): 37ns
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
- Base Part Number: STGF10
- detail: IGBT 600V 23A 25W Through Hole TO-220FP
